BFP193W(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFP193W
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFP193W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

fT

IC = 50 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

Ccb

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

Cce

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

Ceb

VEB = 0.5 V, f = 1 MHz

Noise figure

F

IC = 10 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

6

8

- GHz

- 0.63 0.9 pF

- 0.33 -

-

1.8

-

dB

-

1.3

-

-

2.1

-

Power gain, maximum available 1)

IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gma

f = 1.8 GHz

- 19.5 -

-

13

-

Transducer gain

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

-

15

-

-

9

-

1Gma = |S21 / S12| (k-(k2-1)1/2)

3

Aug-09-2001

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