5082-3188 데이터 시트보기 (PDF) - HP => Agilent Technologies
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5082-3188 Datasheet PDF : 4 Pages
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2
Mechanical
Specifications
The Agilent Outline 15 package
has a glass hermetic seal with
dumet leads. The lead finish is 95-
5 tin-lead (SnPb) for all PIN
diodes. The leads on the Outline
15 package should be restricted
so that the bend starts at least 1/
16 inch (1.6 mm) from the glass
body. Typical package inductance
and capacitance are 2.5 nH and
0.13 pF, respectively. Marking is
by digital coding with a cathode
band.
General Purpose Diodes
Electrical Specifications at TA = 25°C
Part
Number
5082-
Maximum
Total
Capacitance
CT (pF)
Minimum
Breakdown
Voltage
VBR (V)
General Purpose Switching and Attenuating
3001
0.25
200
3039
0.25
150
1N5719
0.3**
150
3077
0.3
200
Band Switching
3188
1.0*
35
Test
Conditions
VR = 50 V
*VR = 20 V
**VR = 100 V
f = 1 MHz
VR = VBR
Measure
IR ≤ 10 µA
Maximum
Residual Series
Resistance
RS (Ω)
1.0
1.25
1.25
1.5
0.6**
IF =100 mA
*IF = 20 mA
**IF = 10 mA
f = 100 MHz
Effective Carrier Reverse Recovery
Lifetime
Time
τ (ns)
trr (ns)
100 (min.)
100 (min.)
100 (min.)
100 (min.)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
70 (typ.)*
IF = 50 mA
IR = 250 mA
*IF = 10 mA
*IR = 6 mA
12 (typ.)
IF = 20 mA
VR = 10 V
90% Recovery
Notes:
Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at TA = 25°C
Part
Number
5082-3080
1N5767*
5082-3379
5082-3081
Effective
Carrier
Lifetime
t (ns)
1300 (typ.)
1300 (typ.)
1300 (typ.)
2500 (typ.)
Max.
Min.
Residual
Max.
Breakdown Series
Total
Voltage Resistance Capacitance
VBR (V)
RS (Ω)
CT (pF)
100
2.5
0.4
100
2.5
0.4
50
0.4
100
3.5
0.4
High
Resistance
Limit, RH (W)
Min.
1000
1000
Max.
1500
Low
Resistance
Limit, RL (W)
Min. Max.
Max.
Difference
in
Resistance
vs. Bias
Slope, Dc
8**
8**
8**
8**
Test
IF = 50 mA VR = VBR, IF = 100 mA VR = 50 V
Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz
IR ≤ 10 µA
IF = 0.01 mA
f = 100 MHz
IF = 1.0 mA
IF = 20 mA**
f = 100 MHz
Batch
Matched at
IF = 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specifications:
τ = 1.0 msec minimum
IR = 1 µA maximum at VR = 50 V
VF = 1 V maximum at IF = 100 mA.
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