IXFH6N100F 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFH6N100F Datasheet PDF : 4 Pages
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IXFH 6N100F
IXFT 6N100F
Fig. 7. Gate Charge Characteristic Curve
10
VDS = 500V
8
ID = 3A
IG = 10mA
6
4
2
0
0
10
20
30
40
50
Qg - nanocoulombs
Fig. 8. Capacitance Curves
2000
Ciss
1000
700
500
400
300
200
Coss
f = 1MHz
100
70
50
40
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
Fig. 9. Source Current vs. Source to Drain Voltage
18
16
14
12
10
TJ = 125OC
8
TJ = 125oC
TJ = 25oC
6
TJ = 25OC
4
2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
1
D=0.5
D=0.2
0.1 D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single pulse
Fig. 10. Thermal Impedance
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
0.1
5,049,961
5,063,307
1
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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