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SM5817 데이터 시트보기 (PDF) - Diode Semiconductor Korea

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SM5817
DSK
Diode Semiconductor Korea DSK
SM5817 Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
SM5817- - - SM5819
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--213AB,molded plastic
Terminals: Solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.0046 ounces,0.116 grams
Mounting position: Any
DO-213AB
SOLDERABLE ENDS
D2=D1
0
0.20
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SM5817
SM5818
Maximum recurrent peak reverse voltage
VRRM
20
30
Maximum RMS voltage
VRMS
14
21
Maximum DC blocking voltage
VDC
20
30
Maximum average forw ard rectified current
@TA=90
IF(AV)
1.0
Peak forw ard surge current
8.3ms single half-sine-w ave
IFSM
25
superimposed on rated load
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A VF
0.45
0.75
0.55
0.875
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
1.0
10.0
Typical junction capacitance (Note2)
CJ
110
Typical thermal resistance (Note3)
RθJA
80
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
- 55 ---- + 150
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient,vertical PC board mounting,0.5"(12.7mm)lead length.
SM5819
40
28
40
UNITS
V
V
V
A
A
0.60
V
0.90
mA
pF
/W
www.diode.kr

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