LL60 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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LL60 Datasheet PDF : 2 Pages
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LL60/LL60P
Schottky Barrier Diodes
30-50 mAMPERES
40-45 VOLTS
Features
*Silicon Epitaxial Planner Diode
*Low Reverse Current and Low Forward Voltage
*Low Current Rectification and High Speed Switching
*High Reliability
*Used in Recorder, Radio, TV, Telephone as Detectors
MINI-MELF
Cathode indification
Mechanical Data
*Case : MINI-MELF Glass Case (SOD-80)
*Polarity: Color Band Denotescathode Band
*Weight : Approx 0.05 gram
3.4 +0.3
-0.1
0.4± 0.1
Dimension in millimeters
Maximum Ratings ( TA=25 C Unless otherwise noted)
Characteristic
Pepetitive Peak Reverse Voltage
Symbol
VRRM
Non-Repetitive Peak Forward Surge Current
@t=1S
IFSM
LL60
40
150
LL60P
Unit
45
V
500
mA
Forward Continuous Current, TA =25 C
IF
30
50
mA
Operating and Strorage Temperature Range
TJ , TSTG
-65 to +125
C
Electrical Characteristics ( TA=25 C Unless otherwise noted)
Characteristic
Forward Voltage
IF=1 mA
IF=30 mA
IF=200 mA
LL60
LL60P
LL60
LL60P
Symbol Min
Tpy
VF
-
0.32
-
0.24
-
0.65
-
0.65
Rverse Current
VR=15V
LL60
LL60P
Junction Capacitance
VR=1V, f=1MHz LL60
VR=10V, f=1MHz LL60P
Reverse Recovery Time
IF=I R=1mA , Irr=1 mA, Rc=100
IR
-
0.1
-
0.5
Cj
-
2.0
-
6.0
Trr
-
-
Max
0.5
0.5
1.0
1.0
0.5
1.0
-
-
1.0
Unit
V
uA
PF
nS
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mail:lge@luguang.cn
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