DTA123J(2012) 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTA123J
(Rev.:2012)

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

DTA123J series

Absolute maximum ratings (Ta = 25C)

Parameter

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

DTA123JM

DTA123JEB

DTA123JE

DTA123JUB

DTA123JUA

DTA123JKA

Junction temperature

Range of storage temperature

Symbol

VCC

VIN

IO

IC(MAX.)*1

PD *2

Tj

Tstg

Data Sheet

Values

Unit

50

V

12 to 5

V

100

mA

100

mA

150

mW

200

mW

150

C

55 to 150

C

Electrical characteristics(Ta = 25C)

Parameter

Symbol

Input voltage

VI(off)

VI(on)

Output voltage

VO(on)

Input current

Output current

II

IO(off)

DC current gain

GI

Input resistance

R1

Resistance ratio

R2/R1

Conditions

VCC = 5V, IO = 100μA

VO = 0.3V, IO = 5mA

IO / II = 5mA / 0.25mA

VI = 5V

VCC = 50V, VI = 0V

VO = 5V, IO = 10mA

-

-

Transition frequency

fT *1

VCE = 10V, IE = 5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

Min.

-

1.1

-

-

-

80

1.54

17

-

Typ.

-

-

0.1

-

-

-

2.2

21

250

Max.

0.5

-

0.3

3.6

0.5

-

2.86

26

-

Unit

V

V

mA

A

-

k

-

MHz

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© 2012 ROHM Co., Ltd. All rights reserved.

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2012.03 - Rev.A

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