DTA123JE 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTA123JE

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

DTA123J series

　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Input voltage

Output current

Collector current

DTA123JM

DTA123JEB

Power dissipation

DTA123JE

DTA123JUB

DTA123JUA

DTA123JKA

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCC

-50

V

VIN

-12 to 5

V

IO

-100

mA

IC(MAX)*1

-100

mA

150

150

150

PD*2

mW

200

200

200

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

VI(off) VCC = -5V, IO = -100μA -

- -0.5

V

VI(on) VO = -0.3V, IO = -5mA

-1.1

-

-

VO(on) IO / II = -5mA / -0.25mA - -100 -300 mV

II VI = -5V

-

- -3.6 mA

IO(off) VCC = -50V, VI = 0V

-

- -500 nA

GI VO = -5V, IO = -10mA

80

-

-

-

R1

-

1.54 2.2 2.86 kΩ

R2/R1

-

17 21 26

-

Transition frequency

f

*1

T

VCE = -10V, IE = 5mA,

f = 100MHz

- 250 - MHz

*1 Characteristics of built-in transistor.

*2 Each terminal mounted on a reference land.

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20150311 - Rev.002

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