2SD1270 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1270 Datasheet PDF : 3 Pages
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Power Transistors
2SD1270
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB945
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
40
W
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
IC = 4A, IB = 0.2A
IC = 4A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50V
min
typ
max Unit
10
µA
50
µA
80
V
45
60
260
0.5
V
1.5
V
30
MHz
0.5
µs
1.5
µs
0.15
µs
*hFE2 Rank classification
Rank
R
Q
hFE2
60 to 120 90 to 180
P
130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification.
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