2SD1270 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1270 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.2A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.2A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
fT
Transition frequency
IC=0.5A;VCE=10V;f=10MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A ;IB1=0.2A ;IB2=-0.2A
VCC=50V
hFE-2 Classifications
R
Q
P
60-120 90-180 130-260
Product Specification
2SD1270
MIN TYP. MAX UNIT
80
V
0.5
V
1.5
V
10
μA
50
μA
45
60
260
30
MHz
0.5
μs
1.5
μs
0.15
μs
2
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