IRF1407LPBF 데이터 시트보기 (PDF) - Infineon Technologies

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IRF1407LPBF

HEXFET® Power MOSFET

Infineon Technologies 

IRF1407S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

V(BR)DSS/TJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LD

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Coss

Coss eff.

Output Capacitance

Output Capacitance

Effective Output Capacitance

Source-Drain Ratings and Characteristics

75 ––– ––– V VGS = 0V, ID = 250µA

––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA 

––– ––– 0.0078  VGS = 10V, ID = 78A 

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

74 ––– ––– S VDS = 25V, ID = 78A

––– –––

––– –––

20

250

µA

VDS =75 V, VGS = 0V

VDS = 60V,VGS = 0V,TJ =150°C

–––

–––

–––

200

-200

nA

VGS = 20V

VGS = -20V

––– 160 250

ID = 78A

––– 35 52 nC VDS = 60V

––– 54 81

––– 11 –––

––– 150 –––

––– 150 –––

––– 140 –––

––– 4.5 –––

––– 7.5 –––

VGS = 10V 

VDD = 38V

ns

ID =78A

RG= 2.5

VGS = 10V 

Between lead,

nH

6mm (0.25in.)

from package

and center of die contact

––– 5600 –––

VGS = 0V

––– 890 –––

––– 190 –––

––– 5800 –––

––– 560 –––

VDS = 25V

pF

ƒ = 1.0kHz, See Fig. 5

VGS = 0V, VDS = 1.0V ƒ = 1.0kHz

VGS = 0V, VDS = 60V ƒ = 1.0kHz

––– 1100 –––

VGS = 0V, VDS = 0V to 60V

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

–––

–––

––– 100

––– 520

MOSFET symbol

A

showing the

integral reverse

p-n junction diode.

––– ––– 1.3 V TJ = 25°C,IS = 78A,VGS = 0V 

––– 110 170 ns TJ = 25°C ,IF = 78A

––– 390 590 nC di/dt = 100A/µs 

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

 starting TJ = 25°C, L = 0.13mH, RG = 25, IAS = 78A, VGS =10V. (See fig. 12)

 ISD 78A, di/dt 320A/µs, VDD V(BR)DSS, TJ  175°C.

 Pulse width 400µs; duty cycle  2%.

 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.

 Uses IRF1407 data and test conditions.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

2

2016-5-26

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