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SST39VF1601C(2010) 데이터 시트보기 (PDF) - Silicon Storage Technology

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SST39VF1601C
(Rev.:2010)
SST
Silicon Storage Technology SST
SST39VF1601C Datasheet PDF : 33 Pages
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16 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
FEATURES:
Data Sheet
• Organized as 1M x16: SST39VF1601C/1602C
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 8 KWord)
– Bottom Block-Protection (bottom 8 KWord)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Flexible block architecture; one 8-, two 4-, one
16-, and thirty one 32-KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Latched Address and Data
• Security-ID Feature
– SST: 128 bits; User: 128 words
• Fast Read Access Time:
– 70 ns
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
– Ready/Busy# Pin
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm)
• All devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39VF1601C and SST39VF1602C devices are
1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manu-
factured with SST proprietary, high performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST39VF160xC writes (Program or Erase) with a
2.7-3.6V power supply. These devices conform to JEDEC
standard pinouts for x16 memories.
Featuring high performance Word-Program, the
SST39VF1601C/1602C devices provide a typical Word-
Program time of 7 µsec. These devices use Toggle Bit,
Data# Polling, or the RY/BY# pin to indicate the completion
of Program operation. To protect against inadvertent write,
they have on-chip hardware and Software Data Protection
schemes. Designed, manufactured, and tested for a wide
spectrum of applications, these devices are offered with a
guaranteed typical endurance of 100,000 cycles. Data
retention is rated at greater than 100 years.
The SST39VF1601C/1602C devices are suited for applica-
tions that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
©2010 Silicon Storage Technology, Inc.
S71380-04-000
05/10
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reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39VF1601C/1602C are offered in 48-lead TSOP, 48-
ball TFBGA, and 48-ball WFBGA packages. See Figures
2, 3, and 4 for pin assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

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