BUZ80A 데이터 시트보기 (PDF) - Inchange Semiconductor

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BUZ80A

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

BUZ80A

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA

VGS(TH) Gate Threshold Voltage

VDS= VGS; ID= 1mA

RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A

IGSS

Gate Source Leakage Current

VGS= ±20V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= 800VGS= 0

VSD

Diode Forward Voltage

IF= 6A;VGS= 0

MIN MAX UNIT

800

V

2.1

4

V

3

Ω

±00 nA

250

uA

1.3

V

isc website：www.iscsemi.cn

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