NX3V1T66_08 데이터 시트보기 (PDF) - NXP Semiconductors.
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NX3V1T66_08 Datasheet PDF : 18 Pages
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NXP Semiconductors
NX3V1T66
Low-voltage analog switch
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C.
Symbol Parameter
Conditions
Min Typ Max Unit
THD
total harmonic
distortion
fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 16
VCC = 1.4 V; VI = 1 V (p-p)
[1]
-
0.05
-
%
VCC = 1.65 V; VI = 1.2 V (p-p)
-
0.03
-
%
VCC = 2.3 V; VI = 1.5 V (p-p)
-
0.01
-
%
VCC = 2.7 V; VI = 2 V (p-p)
-
0.01
-
%
f(−3dB)
αiso
−3 dB frequency
response
isolation (OFF-state)
RL = 50 Ω; see Figure 17
VCC = 1.4 V to 3.6 V
fi = 100 kHz; RL = 50 Ω; see Figure 18
[1]
-
25
- MHz
[1]
VCC = 1.4 V to 3.6 V
-
−90
-
dB
Vct
crosstalk voltage
between digital inputs and switch;
fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 19
VCC = 1.4 V to 3.6 V
- 0.32 -
V
Qinj
charge injection
fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V;
Rgen = 0 Ω; see Figure 20
VCC = 1.5 V
-
6.5
- pC
VCC = 1.8 V
-
6.5
- pC
VCC = 2.5 V
-
6.5
- pC
VCC = 3.3 V
-
6.5
- pC
[1] fi is biased at 0.5VCC.
12.3 Test circuits
VCC
0.5VCC
VIH
E
Y/Z
RL
Z/Y
fi
D
Fig 16. Test circuit for measuring total harmonic distortion
001aah378
NX3V1T66_2
Product data sheet
Rev. 02 — 24 July 2008
© NXP B.V. 2008. All rights reserved.
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