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NX3V1T66_08 데이터 시트보기 (PDF) - NXP Semiconductors.

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NX3V1T66_08
NXP
NXP Semiconductors. NXP
NX3V1T66_08 Datasheet PDF : 18 Pages
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NXP Semiconductors
NX3V1T66
Low-voltage analog switch
10. Recommended operating conditions
Table 6. Recommended operating conditions
Symbol Parameter
Conditions
VCC
VI
VSW
Tamb
t/V
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
enable input E
VCC = 1.4 V to 3.6 V
Min
1.4
0
[1] 0
40
[2] -
Max
3.6
3.6
VCC
+125
200
Unit
V
V
V
°C
ns/V
[1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signal levels.
11. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions
Tamb = 25 °C
Min Typ Max
VIH
VIL
II
IS(OFF)
IS(ON)
ICC
ICC
HIGH-level
input voltage
LOW-level
input voltage
input leakage
current
OFF-state
leakage
current
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
enable input E; VI = GND to 3.6 V;
VCC = 1.4 V to 3.6 V
Y port; see Figure 5;
VCC = 1.4 V to 3.6 V;
ON-state
leakage
current
Z port; see Figure 6;
VCC = 1.4 V to 3.6 V;
supply current
additional
supply current
VI = VCC or GND; VCC = 3.6 V;
VSW = GND or VCC; IO = 0 A
VSW = GND or VCC
VI = 2.6 V; VCC = 3.6 V
VI = 1.8 V; VCC = 3.6 V
VI = 1.8 V; VCC = 2.5 V
0.9 -
-
0.9 -
-
1.1 -
-
1.3 -
-
-
- 0.3
-
- 0.4
-
- 0.4
-
- 0.5
-
-
-
-
- ±5
-
- ±5
-
- ±100
- 0.35 0.7
- 2.5 4
- 50 200
Tamb = 40 °C to +125 °C Unit
Min Max Max
(85 °C) (125 °C)
0.9
-
-V
0.9
-
-V
1.1
-
-V
1.3
-
-V
-
0.3
0.3 V
-
0.4
0.3 V
-
0.4
0.4 V
-
0.5
0.5 V
-
±0.5
±1 µA
-
±50 ±500 nA
-
±50 ±500 nA
-
690 6000 nA
-
1
1 µA
-
5
5 µA
-
300
500 nA
NX3V1T66_2
Product data sheet
Rev. 02 — 24 July 2008
© NXP B.V. 2008. All rights reserved.
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