2SB1216 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1216

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1216

DESCRIPTION

·Excellent linearity of hFE

·Small and slim package facilitating compactness of sets

·Low collector-to-emitter saturation voltage

·Fast switching speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Relay drivers,High speed inverters,converters and other

general high-current switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-4

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-8

A

20

W

1.0

W

150

℃

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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