KSB1116 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSB1116

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSB1116/1116A

Audio Frequency Power Amplifier & Medium

Speed Switching

• Complement to KSD1616/1616A

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

: KSB1116

: KSB1116A

VCEO

Collector-Emitter Voltage

: KSB1116

: KSB1116A

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

* Collector Current (Pulse)

PC

Collector Power Dissipation

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty Cycle≤50%

1

TO-92

1. Emitter 2. Collector 3. Base

Ratings

-60

-80

-50

-60

-6

-1

-2

0.75

150

-55 ~ 150

Units

V

V

V

V

V

A

A

W

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

* DC Current Gain : KSB1116

: KSB1116A

hFE2

VBE (on) * Base-Emitter On Voltage

VCE (sat) * Collector-Emitter Saturation Voltage

VBE (sat) * Base-Emitter Saturation Voltage

Cob

Output Capacitance

fT

Current Gain Bandwidth Product

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

* Pulse Test: PW ≤350µs, Duty Cycle≤2%

VCB= -60V, IE=0

VEB= -6V, IC= 0

VCE= -2V, IC= -100mA

VCE= -2V, IC = -1A

VCE= -2V, IC= -50mA

IC= -1A, IB= -50mA

IC= -1A, IB= -50mA

VCB= -10V, IE=0, f=1MHz

VCE= -2V, IC= -100mA

VCC= -10V, IC= -100mA

IB1= -IB2= -10mA

VBE (off)= 2~3V

Min.

135

135

81

-600

70

Typ.

-650

-0.2

-0.9

25

120

0.07

0.7

0.07

Max.

-100

-100

600

400

Units

nA

nA

-700

-0.3

-1.2

mV

V

V

pF

MHz

µs

µs

µs

hFE Classification

Classification

hFE1

Y

135 ~ 270

G

200 ~ 400

L

300 ~ 600

©2002 Fairchild Semiconductor Corporation

Rev. A2, January 2002

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