DTC114WE_REV_B 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTC114WE_REV_B

100mA / 50V Digital transistors (with built-in resistors)

ROHM Semiconductor 

DTC114WE / DTC114WUA / DTC114WKA / DTC114WSA

Transistors

zAbsolute maximum ratings (Ta=25°C)

Parameter

Supply voltage

Input voltage

Output current

Power

dissipation

DTC114WE

DTC114WUA / DTC114WKA

DTC114WSA

Junction temperature

Storage temperature

∗ When mounted on the recommended land

Symbol

VCC

VI

IO

IC(Max.)

PD

Tj

Tstg

Limits

Unit

50

V

−10 to +30

V

100

mA

100

150 ∗

200 ∗

mW

300 ∗

150

°C

−55 to +150

°C

zExternal characteristics (Unit: mm)

Parameter

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

∗ Characteristics of built-in transistor

Symbol

VI(off)

VI(on)

VO(on)

II

IO(off)

GI

R1

R2/R1

fT ∗

Min.

−

3

−

−

−

24

7

0.37

−

Typ.

−

−

0.1

−

−

−

10

0.47

250

Max.

0.8

−

0.3

0.88

0.5

−

13

0.57

−

Unit

V

V

mA

µA

−

kΩ

−

MHz

Conditions

VCC=5V, IO=100µA

VO=0.3V, IO=2mA

IO=10mA, II=0.5mA

VI=5V

VCC=50V, VI=0V

IO=10mA, VO=5V

−

−

VCE=10V, IE= −5mA, f=100MHz

Rev.B

2/3

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