LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
B120B thru B160B
REVERSE VOLTAGE - 20 to 60 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
IEC 61000-4-2, level 4 (ESD), >15KV (air)
MECHANICAL DATA
Case : Molded plastic
Polarity :Color band denotes cathode.
Weight : 0.003 ounces, 0.093 grams
SMB
SMB
A
DIM. MIN. MAX.
A
4.06 4.57
B
3.30 3.94
B
C
C
1.96 2.21
D
0.15 0.31
E
5.21 5.59
G
H
F
D
E
F
0.05 0.20
G
2.01 2.50
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (see Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
VRRM
VRMS
VDC
I(AV)
IFSM
Maximum forward Voltage at 1.0A DC
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
Typical Junction
Capacitance (Note 1)
CJ
B120B
20
14
20
B130B
30
21
30
0.5
0.1
10
B140B
40
28
40
1.0
30
110
Typical Thermal Resistance (Note 2)
R0JL
22
Operating Temperature Range
TJ
-55 to +125
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Unit mounted on 0.75t glass-epoxy substrate with 2x3 mm copper pad.
-55 to +150
B150B
50
35
50
B160B
60
42
60
UNIT
V
V
V
A
A
0.7
V
0.5
10
mA
pF
C/W
-55 to +150
C
C
REV. 8, Jul-2012, KSHB01