FQI27N25TU 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQI27N25TU Datasheet PDF : 6 Pages
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Typical Characteristics
100
10
100us
1
1ms
OPERATION IN THIS
AREA MAY BE
0.1 LIMITED BY rDS(on) SINGLE PULSE
TJ = MAX RATED
10ms
100ms
0.01
TC = 25oC
1
10
100
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 4. Forward Bias Safe Operating Area
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 125oC
1
1E-3
0.01 0.1
1
10 100
tAV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 20V
10
TJ = 150oC
1 TJ = 25oC
TJ = -55oC
0.1
2
4
6
8
10
12
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
200
VGS = 0 V
100
TJ = 150 oC
10
TJ = 25 oC
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Forward Diode Characteristics
80
80μs PULSE WIDTH
Tj=25oC
60
40
20
VGS
15V Top
10V
8V
7V
6V Bottom
6V
0
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
60
80μs PULSE WIDTH
Tj=150oC
40
20
VGS
15V 5T.5oVp
10V
8V
7V
6V
5.5V
5V Bottom
5V
0
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
FQB27N25TM_F085/QI27N25TU_F085 Rev. C1
4
www.fairchildsemi.com
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