A940 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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A940 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50m A
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-10V
V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
ICBO
Collector cut-off current
VCB=-120V;IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-0.5A ; VCE=-10V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-10V
Product Specification
2SA940
MIN TYP. MAX UNIT
-1.5
V
-0.75 -0.85
V
-150
V
-150
V
-5
V
-10
μA
-10
μA
40
140
55
pF
4
MHz
2
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