FDC2512 데이터 시트보기 (PDF) - KEXIN Industrial

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FDC2512

N-Channel Enhancement MOSFET

KEXIN Industrial 

SMD Type

MOSFET

N-Channel Enhancement MOSFET

FDC2512 (KDC2512)

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage *1

Static Drain-Source On-Resistance *1

On State Drain Current *1

Forward Transconductance *1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Maximum Body-Diode Continuous Current

Diode Forward Voltage *1

Symbol

VDSS

IDSS

IGSSF

VGS(th)

RDS(On)

ID(ON)

gFS

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

Qrr

IS

VSD

Test Conditions

ID=250μA, VGS=0V

VDS=120V, VGS=0V

VDS=0V, VGS=±20V

VDS=VGS , ID=250μA

VGS=10V, ID=1.4A

VGS=10V, ID=1.4A TJ=125℃

VGS=6.0V, ID=1.3A

VGS=10V, VDS=5V

VDS=10V, ID=1.4A

VGS=0V, VDS=75V, f=1MHz

VGS=10V, VDS=75V, ID=1.4A *1

VGS=10V, VDS=75V, ID=1A,RGEN=6Ω *1

IF= 1.4A, dI/dt= 300A/μs *1

IS=1.3A,VGS=0V

Min Typ Max Unit

150

V

1 μA

±100 nA

2 2.6 4

V

319 425

624 875 mΩ

332 475

4

A

4

S

344

22

pF

9

8 11

1.5

nC

2.3

6.5 13

3.5 7

22 33 ns

4

8

45.8

119

nC

1.3 A

0.8 1.2 V

*1 Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%

■ Marking

Marking

2512

2 www.kexin.com.cn

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