MMBT5551 데이터 시트보기 (PDF) - ZOWIE Technology

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MMBT5551

High Voltage Transistor NPN Silicon

ZOWIE Technology 

Zowie Technology Corporation

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)

Characteristic

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

DC Current Gain

( IC= 1.0 mAdc, VCE= 5.0 Vdc )

( IC= 10 mAdc, VCE= 5.0 Vdc )

( IC= 50 mAdc, VCE= 5.0 Vdc )

80

-

HFE

80

250

-

30

-

Collector-Emitter Saturation Voltage

( IC= 10 mAdc, IB= 1.0 mAdc )

( IC= 50 mAdc, IB= 5.0 mAdc )

Base-Emitter Saturation Voltage

( IC= 10 mAdc, IB= 1.0 mAdc )

( IC= 50 mAdc, IB= 5.0 mAdc )

VCE(sat)

-

-

VBE(sat)

-

-

0.15

Vdc

0.20

1.0

Vdc

1.0

REV. : 0

Zowie Technology Corporation

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