MMBT5551(2006) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MMBT5551 Datasheet PDF : 5 Pages
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2N5551- MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
April 2006
tm
2N5551
TO-92
MMBT5551
3
2
1 SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current - Continuous
Junction and Storage Temperature
160
180
6.0
600
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
2N5551
625
5.0
83.3
200
Max
*MMBT5551
350
2.8
357
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
2N5551- MMBT5551 Rev. B
www.fairchildsemi.com
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