2SD1610 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SD1610 Datasheet PDF : 6 Pages
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2SD1609, 2SD1610
Electrical Characteristics (Ta = 25°C)
2SD1609
2SD1610
Item
Symbol Min Typ Max Min Typ Max
Collector to base
breakdown voltage
V(BR)CBO
160 —
—
200 — —
Collector to emitter
breakdown voltage
V(BR)CEO
160 —
—
200 — —
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
——
Collector cutoff current ICBO
— — 10 — — —
— — — — — 10
DC current tarnsfer ratio hFE1*1
hFE2
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
60 —
30 —
——
——
320 60
— 30
1.5 —
2
—
— 320
——
— 1.5
—2
Gain bandwidth product fT
Collector output
Cob
capacitance
— 140 — — 140 —
— 3.8 — — 3.8 —
Note: 1. The 2SD1609 and 2SD1610 are grouped by hFE1 as follows.
Unit Test conditions
V
IC = 10 µA, IE = 0
V
IC = 1 mA, RBE = ∞
V
IE = 10 µA, IC = 0
µA VCB = 140 V, IE = 0
VCB = 160 V, IE = 0
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 1 mA
V
VCE = 5 V, IC = 10 mA
V
IC = 30 mA, IB = 3 mA
MHz
pF
VCE = 5 V, IC = 10 mA
VCB = 10 V, IE = 0,
f = 1 MHz
B
60 to 120
C
D
100 to 200 160 to 320
Maximum Collector Dissipation
Curve
1.5
1.0
0.5
0
50
100
150
Ambient temperature Ta (°C)
Typical Output Characteristics
20
16
120
110
100
12
90
80
70
8
60
50
40
4
30
20
10 µA
IB = 0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
2
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