ZVP4525G 데이터 시트보기 (PDF) - Zetex => Diodes

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ZVP4525G

250V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZVP4525G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Gate Source Voltage

Continuous Drain Current (VGS=10V; TA=25°C)(a)

(VGS=10V; TA=70°C)(a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

ID

IDM

IS

ISM

PD

:Tj Tstg

LIMIT

250

±40

-265

-212

-1

-0.75

-1

2

16

-55 to +150

UNIT

V

V

mA

mA

A

A

A

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

Junction to Ambient (b)

RθJA

RθJA

63

°C/W

26

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

NB High Voltage Applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard to

voltage spacing between conductors.

ISSUE 1 - MARCH 2001

2

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