BFR90 데이터 시트보기 (PDF) - Microsemi Corporation

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BFR90

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

• High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA

• Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz

• High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz

BFR90

Macro T

(STYLE #2)

DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in

applications requiring fast switching times.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Total Device Dissipation @ TA = 60ºC

Derate above 60ºC

Value

15

20

3.0

30

180

2.0

Unit

Vdc

Vdc

Vdc

mA

mWatts

mW/ ºC

MSC1307.PDF 10-25-99

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