BFR90A(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors

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BFR90A
(Rev.:1999)

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

BFR90A

Vishay Telefunken

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

RF amplifier up to GHz range specially for wide band

antenna amplifier.

Features

D High power gain

D Low noise figure

D High transition frequency

3

2

94 9308

13623

1

BFR90A Marking: BFR90A

Plastic case (TO 50)

1 = Collector, 2 = Emitter, 3 = Base

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

Test Conditions

Tamb ≤ 60 °C

Symbol

Value

Unit

VCBO

VCEO

VEBO

IC

Ptot

Tj

Tstg

20

V

15

V

2

V

30

mA

300

mW

150

°C

–65 to +150 °C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3

RthJA

300

K/W

plated with 35mm Cu

Document Number 85029

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

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