STPS1150M(2011) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS1150M Datasheet PDF : 11 Pages
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STPS1150
Characteristics
Figure 1.
Average forward power
dissipation versus average
forward current
PF(AV)(W)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
δ = 0.05
δ = 0.1 δ = 0.2 δ = 0.5
δ=1
IF(AV)(A)
0.4
0.6
0.8
T
δ=tp/T
1.0
tp
1.2
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
1.2 IF(AV)(A)
1.0
0.8
STmite and STmite flat
Rth(j-a) = Rth(j-c)
Rth(j-a) = 120 °C/W
0.6
Rth(j-a) = 250 °C/W
0.4
SMA
Rth(j-a) = Rth(j-l)
T
0.2
DO-41
Rth(j-a) = Rth(j-l)
δ = tp / T
0.0
tp
Tamb(°C)
0
25
50
75
100 125 150 175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak
forward current versus overload
duration - maximum values
20 IM(A)
18
STmite
16
14
12
Tc = 25 °C
10
8
Tc = 75 °C
6
4
IM
2
0
1.E-03
t
δ = 0.5
1.E-02
Tc = 125 °C
1.E-01
t(s)
1.E+00
Figure 6.
Non repetitive surge peak
forward current versus overload
duration - maximum values
20 IM(A)
18
16
14
12
10
8
6
4
IM
2
0
1.E-03
t
δ = 0.5
1.E-02
STmite flat
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
1.E-01
t(s)
1.E+00
Doc ID 9472 Rev 5
3/11
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