Z0103NN(2009) 데이터 시트보기 (PDF) - NXP Semiconductors.
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Z0103NN Datasheet PDF : 12 Pages
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NXP Semiconductors
Z0103NN
Logic level four-quadrant triac
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
dIT/dt
IGM
PGM
Tstg
Tj
ITSM
RMS on-state current
rate of rise of on-state
current
peak gate current
peak gate power
storage temperature
junction temperature
non-repetitive peak
on-state current
half sine wave; Tsp ≤ 89 °C; see Figure 1 and 4
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2+ G-
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2+ G+
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2- G+
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2- G-
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
see Figure 2 and 3
I2t
PG(AV)
I2t for fusing
average gate power
tp = 10 ms; sine-wave pulse
2.0
Ptot
(W)
conduction form
angle factor
(degrees) a
1.6
30
4
60
2.8
90
2.2
α
1.2
120
1.9
180
1.57
0.8
0.4
0.0
0
0.2
0.4
0.6
0.8
Min Max Unit
-
800 V
-
1
A
-
50
A/µs
-
50
A/µs
-
20
A/µs
-
50
A/µs
-
1
A
-
2
W
-40 150 °C
-
125 °C
-
8.5 A
-
8
A
-
0.32 A2s
-
0.1 W
003aac259
α = 180°
120°
90°
60°
30°
1
1.2
IT(RMS) (A)
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
Z0103NN_3
Product data sheet
Rev. 03 — 5 August 2009
© NXP B.V. 2009. All rights reserved.
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