VS-STPS1045BPBF 데이터 시트보기 (PDF) - Vishay Semiconductors
부품명
상세내역
제조사
VS-STPS1045BPBF Datasheet PDF : 7 Pages
| |||
VS-STPS1045BPbF
Vishay Semiconductors
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
VALUES
10 A
20 A
TJ = 25 °C
0.63
0.84
10 A
20 A
TJ = 125 °C
0.57
0.72
TJ = 25 °C
TJ = 125 °C
0.2
VR = Rated VR
15
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 760
Measured lead to lead 5 mm from package body
5.0
Rated VR
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES UNITS
- 40 to 175 °C
3.0
°C/W
50
0.3
g
0.01
oz.
STPS1045B
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94323
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 14-Jan-11
Share Link: 