KDV257E 데이터 시트보기 (PDF) - KEC
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KDV257E Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
ᴌLow Series Resistance : rs=0.50ή(Max.)
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
10
150
-55ᴕ150
UNIT
V
ᴱ
ᴱ
KDV257E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V
C2V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1ỌA
VR=10V
VR=1V, f=1MHz
VR=2V, f=1MHz
-
VR=1V, f=470MHz
MIN.
10
-
19.5
14.3
1.3
-
TYP.
-
-
-
-
-
-
MAX.
-
10
23.5
17.6
-
0.5
UNIT
V
nA
pF
ή
Marking
Type Name
EA
2001. 6. 11
Revision No : 0
1/2
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