SIHF740ASTRA 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHF740ASTRA Datasheet PDF : 8 Pages
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IRF740AS, IRF740AL, SiHF740AS, SiHF740AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ad
400
-
-
V
-
0.48
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.55
Ω
4.9
-
-
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 0 V,
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5d
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 0 V VDS = 320 V, f = 1.0 MHz
-
VDS = 0 V to 400 Vc, d
-
-
VGS = 10 V
ID = 10 A, VDS = 320 V,
see fig. 6 and 13b, d
-
-
-
VDD = 200 V, ID = 10 A,
-
RG = 10 Ω, RD = 19.5 Ω, see fig. 10b, d
-
-
1030
-
170
-
7.7
-
pF
1490
-
52
-
61
-
-
36
-
9.9
nC
-
16
10
-
35
-
ns
24
-
22
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
10
A
-
-
40
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
-
-
2.0
V
trr
-
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb, d
240
360
ns
Qrr
-
1.9
2.9
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses IRF740A/SiHF740A data and test conditions.
www.vishay.com
2
Document Number: 91052
S-Pending-Rev. A, 19-Jun-08
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