STK10C68-P30 데이터 시트보기 (PDF) - Simtek Corporation

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STK10C68-P30

CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM

Simtek Corporation 

STK10C68

Internally, RECALL is a two step procedure. First, the

SRAM data is cleared and second, the nonvolatile

information is transferred into the SRAM cells. The

RECALL operation in no way alters the data in the

nonvolatile cells. The nonvolatile data can be recalled

an unlimited number of times.

cally initiated. The voltage on the VCC pin must not

drop below 4.0V once it has risen above it in order for

the RECALL to operate properly. Due to this automatic

RECALL, SRAM operation cannot commence until tNLQX

after VCC exceeds 4.0V. 4.0V is a typical, character-

ized value.

Like the STORE cycle, a transition must occur on some

control pin to cause a recall, preventing inadvertent

multi-triggering. On power-up, once VCC exceeds the

VCC sense voltage of 4.0V, a RECALL cycle is automati

If the STK10C68 is in a WRITE state at the end of

power-up RECALL, the SRAM data will be corrupted.

To help avoid this situation, a 10K Ohm resistor should

be connected between W and system VCC.

4-9

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