2SD1163 데이터 시트보기 (PDF) - Renesas Electronics
부품명
상세내역
제조사
2SD1163 Datasheet PDF : 7 Pages
| |||
2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
IC (surge)
PC * 1
Tj
Tstg
Rating
2SD1163
2SD1163A
Unit
300
350
V
120
150
V
6
6
V
7
7
A
10
10
A
20
20
A
40
40
W
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector cutoff current ICBO
Collector to emitter
breakdown voltage
V(BR)CEO
Emitter to base
breakdown voltage
V(BR)EBO
DC current transfer ratio hFE
Collector to emitter
saturation voltage
VCE (sat)
Base to emitter
saturation voltage
VBE (sat)
Fall time
tf
Note: 1. Pulse test.
2SD1163
Min Typ
——
——
120 —
6—
25 —
——
——
——
Max
5
—
—
—
—
2.0
1.2
0.5
2SD1163A
Min Typ
——
——
150 —
6—
25 —
——
——
——
Max
—
5
—
—
—
1.0
1.2
0.5
Unit
mA
mA
V
V
V
V
µs
Test conditions
VCB = 300 V, IE = 0
VCB = 350 V, IE = 0
IC = 10 mA, RBE = ∞
IE = 10 mA, IC = 0
VCE = 5 V, IC = 5 A*1
IC = 5 A, IB = 0.5 A*1
IC = 5 A, IB = 0.5 A*1
ICP = 3.5 A,
IB1 = 0.45 A
Share Link: 