2SK2050 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SK2050 Datasheet PDF : 2 Pages
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isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
INCHANGE Semiconductor
2SK2050
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VSD
Diode Forward On-Voltage
IF=2 IDR ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 4V; ID= 15A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on) Turn-on Delay Time
tf
Fall Time
td(off) Turn-off Delay Time
VGS=10V;
ID=30A;
VDD=30V;
RL=25Ω
MIN TYPE MAX UNIT
100
V
1.0
1.5
2.5
V
0.9
1.5
V
0.04
0.07
Ω
±100 nA
500
µA
2500 3700
250
380
pF
500
750
140
210
20
30
ns
260
390
500
750
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