FDS4559_02 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4559_02 Datasheet PDF : 8 Pages
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Typical Characteristics: Q2
10
ID = -3.0A
8
6
VDS = 10V
20V
30V
4
2
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
100µs
1
VGS = -10V
SINGLE PULSE
0.1 RθJA = 135oC/W
TA = 25oC
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1200
1000
800
600
C IS S
f = 1 MHz
VGS = 0 V
400
200
CRSS
COSS
0
0
10
20
30
40
50
60
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4559 Rev C1(W)
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