BD379 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD379 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD375/377/379
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD375
BD377 IC= 100mA ; IB= 0
BD379
BD375
VCBO
Collector-Base Voltage BD377 IC= 0.1mA ; IE= 0
BD379
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 2V
BD375 VCB= 45V; IE= 0
ICBO
Collector Cutoff Current BD377 VCB= 60V; IE= 0
BD379 VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.15A ; VCE= 2V
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 0.5A; IB1= -IB2= 50mA;
VCC= 30V
hFE-1 Classifications
6
10
16
25
40-100 63-160 100-250 150-375
MIN TYP. MAX UNIT
45
60
V
80
50
75
V
100
1.0
V
1.5
V
2
2
μA
2
0.1 mA
40
375
20
0.05
μs
0.5
μs
isc Website：www.iscsemi.cn
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