FDS4435BZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4435BZ Datasheet PDF : 4 Pages
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July 2005
FDS4435BZ
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
• –8.8 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V
RDS(ON) = 35 mΩ @ VGS = – 4.5 V
• Extended VGSS range (–25V) for battery applications
• HBM ESD protection level of ±4.5 kV typical (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS compliant
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4435BZ
FDS4435BZ
13’’
5
4
6
3
7
2
8
1
Ratings
–30
±25
–8.8
–50
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4435BZ Rev B (W)
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