FQB9N50C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQB9N50C Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. I = 250 μ A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 4.5 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
s in g le p u lse
※ N o te s :
1 . Z θ J C( t ) = 0 . 9 3 ℃ / W M a x .
2 . D u ty F ac to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. A, Jun 2009
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