2N2857 데이터 시트보기 (PDF) - Microsemi Corporation

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2N2857

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

(off)

Symbol

Test Conditions

BVCEO

BVCBO

BVEBO

ICBO

(on)

HFE

Collector-Emitter Breakdown Voltage

(IC = 3.0 mAdc, IB = 0)

Collector-Base Breakdown Voltage

(IC=1.0 µAdc, IE=0)

Emitter-Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

Collector Cutoff Current

(VCE = 15 Vdc, IE = 0 Vdc)

DC Current Gain

(IC = 3.0 mAdc, VCE = 1.0 Vdc)

DYNAMIC

Symbol

Test Conditions

fT

Current-Gain - Bandwidth Product

(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)

NF

Noise Figure (50 Ohms)

(IC = 1.5 mAdc, VCE = 6 Vdc, f = 500 MHz)

2N2857

Min.

15

30

2.5

-

Value

Typ.

-

-

-

-

Max.

-

-

-

.01

Unit

Vdc

Vdc

Vdc

µA

30

-

150

Min.

Value

Typ.

1.6

5.5

Max.

-

Unit

GHz

dB

MSC1066.PDF 3-10-99

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