PH2729-25M 데이터 시트보기 (PDF) - M/A-COM Technology Solutions, Inc.
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PH2729-25M Datasheet PDF : 4 Pages
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PH2729-25M
Radar Pulsed Power Transistor
25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
TSTG
TJ
Rating
60
3.0
4.0
70
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 10mA
Collector-Emitter Leakage Current VCE = 40V
Thermal Resistance
Vcc = 36V, Pin = 3.0W
Output Power
Vcc = 36V, Pin = 3.0W
Power Gain
Vcc = 36V, Pin = 3.0W
Collector Efficiency
Vcc = 36V, Pin = 3.0W
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 36V, Pin = 3.0W
Vcc = 36V, Pin = 3.0W
Vcc = 36V, Pin = 3.0W
Frequency
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
Symbol Min
BVCES
60
ICES
-
RTH(JC)
-
POUT
25
GP
9.2
C
45
RL
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
1.5
mA
1.25 °C/W
-
W
-
dB
-
%
-6
dB
3:1
-
1.5:1
-
1
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