BDX33B 데이터 시트보기 (PDF) - Comset Semiconductors
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BDX33B Datasheet PDF : 4 Pages
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NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCBO=45 V
TC=100°C
BDX33
-
-
VCBO=60 V
ICBO
Collector-Base Cutoff
Current
TC=100°C
VCBO=80 V
TC=100°C
BDX33A -
-
5 mA
BDX33B -
-
VCBO=100 V
TC=100°C
BDX33C -
-
BDX33
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC=4.0 A, IB=8.0 mA
BDX33A
BDX33B
-
BDX33C
BDX33
- 2.5
V
IC=3.0 A, IB=6.0 mA
BDX33A
BDX33B
-
- 2.5
BDX33C
BDX33
VF
Forward Voltage (pulse
method)
IF=8 A
BDX33A
BDX33B
-
- 4.0 V
BDX33C
VBE
Base-Emitter Voltage (*)
IC=4.0 A, VCE=3.0V
BDX33
BDX33A
-
IC=3.0 A, VCE=3.0V
BDX33B
BDX33C
-
- 2.5
V
- 2.5
hFE
DC Current Gain (*)
VCE=3.0 V, IC=4.0 A
BDX33
BDX33A
750
-
VCE=3.0 V, IC=3.0 A
BDX33B
BDX33C
750
-
-
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
3/4
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