FCH47N60-F133 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FCH47N60-F133 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FCH47N60
Device
FCH47N60_F133
Package
TO-247
Reel Size
Tape Width
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
BVDS
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-Body Leakage Current
VGS = 0 V, ID = 250 μA, TC = 25°C
600
VGS = 0 V, ID = 250 μA, TC = 150°C
ID = 250 μA, Referenced to 25°C
VGS = 0 V, ID = 47 A
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-to-Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 23.5 A
VDS = 40 V, ID = 23.5 A
3.0
(Note 4)
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Cosseff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
VDS = 0 V to 400 V, VGS = 0 V
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay
Turn-On Rise Time
Turn-Off Delay
Turn-Off Fall Time
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 300 V, ID = 47 A
RG = 25
VDS = 480 V, ID = 47 A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-to-Source Diode Forward Current
ISM
Maximum Pulsed Drain-to-Source Diode Forward Current
VSD
Drain-to-Source Diode Forward Voltage
VGS = 0 V, ISD = 47 A
trr
Reverse-Recovery Time
Qrr
Reverse-Recovery Charge
VGS = 0 V, ISD = 47 A
dIF/dt = 100 A/s
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 18 A, VDD = 50 V, RG = 25 , Starting TJ = 25C.
3. ISD 47 A, di/dt 200 A/s, VDD BVDSS, Starting TJ = 25C.
4. Pulse Test: Pulse width 300 s, Duty Cycle 2%.
5. Essentially Independent of Operating Temperature Typical Characteristics.
Typ. Max. Unit
V
650
V
0.6
V/°C
700
V
1
10
A
±100 nA
5.0
V
0.058 0.070
40
S
5900 8000 pF
3200 4200 pF
250
pF
160
pF
420
pF
185
430
ns
210
450
ns
520
1100
ns
75
160
ns
210
270
nC
38
nC
110
nC
47
A
141
A
1.4
V
590
ns
25
C
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C1
2
www.fairchildsemi.com
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