FCP380N60E 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FCP380N60E Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FCP380N60E
FCPF380N60E
Device
FCP380N60E
FCPF380N60E
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
BVDS
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
VGS = 0 V, ID = 10 mA, TJ = 150°C 650
ID = 10 mA, Referenced to 25oC
-
VGS = 0 V, ID = 10 A
-
VDS = 480 V, VGS = 0 V
-
VDS = 480 V, TC = 125oC
-
VGS = ±20 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.5
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 5 A
-
gFS
Forward Transconductance
VDS = 20 V, ID = 5 A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss eff.
Qg(tot)
Qgs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
-
VDS = 25 V, VGS = 0 V
f = 1 MHz
-
-
VDS = 380 V, VGS = 0 V, f = 1.0 MHz -
VDS = 0 V to 480 V, VGS = 0 V
-
-
VDS = 380 V, ID = 5 A
VGS = 10 V
-
(Note 4)
-
f = 1 MHz
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 5 A
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 5 A
dIF/dt = 100 A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.3 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.1 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
(Note 4)
-
-
-
-
-
-
Typ.
-
-
0.67
700
-
-
-
-
0.32
10
1330
945
60
25
97
34
5.3
13
6
17
9
64
10
-
-
-
240
3
Quantity
50
50
Max. Unit
-
V
-
V
-
V/oC
-
V
1
μA
10
±100 nA
3.5
V
0.38
Ω
-
S
1770 pF
1260 pF
90
pF
-
pF
-
pF
45
nC
-
nC
-
nC
-
Ω
44
ns
28
ns
138
ns
30
ns
10.2
A
30.6
A
1.2
V
-
ns
-
μC
©2012 Fairchild Semiconductor Corporation
FCP380N60E / FCPF380N60E Rev. C7
2
www.fairchildsemi.com
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