MPSH10 데이터 시트보기 (PDF) - ON Semiconductor
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MPSH10 Datasheet PDF : 3 Pages
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MPSH10
Preferred Device
VHF/UHF Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
PD
Value
25
30
3.0
350
2.8
Unit
Vdc
Vdc
Vdc
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
W
8.0
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200357 °C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
TO−92
CASE 29−11
1
23
STYLE 2
MARKING DIAGRAM
MPS
H10
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
February, 2007 − Rev. 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPSH10/D
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