BFS540 데이터 시트보기 (PDF) - TY Semiconductor
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BFS540 Datasheet PDF : 3 Pages
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Product specification
BFS540
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: N4
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for RF wideband
amplifier applications such as satellite
TV systems and RF portable
communication equipment with signal
frequencies up to 2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
open base
up to Ts = 80 °C; note 1
IC = 40 mA; VCE = 8 V; Tj = 25 °C
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 10 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
−
−
20 V
15 V
120 mA
500 mW
60 120 250
−
9
−
GHz
−
14 −
dB
−
1.3 1.7 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCES
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
RBE = 0
open collector
up to Ts = 80 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
500
150
175
UNIT
V
V
V
mA
mW
°C
°C
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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