BFS540 데이터 시트보기 (PDF) - TY Semiconductor
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BFS540 Datasheet PDF : 3 Pages
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Product specification
BFS540
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 80 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL
RESISTANCE
190 K/W
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Ce
Cc
Cre
fT
GUM
S212
F
PL1
ITO
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
IE = 0; VCE = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
Ic = 40 mA; VCE = 8 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
note 2
MIN. TYP. MAX. UNIT
−
−
50 nA
60 120 250
−
2
−
pF
−
0.9 −
pF
−
0.6 −
pF
−
9
−
GHz
−
14 −
dB
−
8
−
dB
12 13 −
dB
−
1.3 1.8 dB
−
1.9 2.4 dB
−
2.1 −
dB
−
21 −
dBm
−
34 −
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.
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