Transistors
2SB1424 / 2SA1585S
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −20
Collector-emitter breakdown voltage BVCEO −20
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
240
35
Max.
−
−
−
−0.1
−0.1
−0.5
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −5V
IC/IB= −2A/ −0.1A
VCE= −2V, IC= −0.1A
VCE= −2V, IE=0.5A, f=100MHz
VCB= −10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Package
Taping
Code
Type
Basic ordering
hFE unit (pieces)
2SA1585S QR
TP
5000
T100
1000
−
2SB1424 QR
−
hFE values are classified as follows :
Item
hFE
Q
R
120 to 270 180 to 390
zElectrical characteristic curves
−10
VCE= −2V
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
Ta=100°C
25°C
−40°C
−0.02
−0.01
−5m
−2m
−1m
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
BASE TO EMITTER VOLTAGE : VBE (V)
−2.0
−20mA
−18mA
−1.6
−1.2
−0.8
−0.4
Ta=25°C
−16mA −14mA
−12mA
−10mA
−8mA
−6mA
−4mA
−2mA
0
IB=0A
0
−0.2 −0.4 −0.6 −0.8 −1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( )
−5
Ta=25°C
−50mA −45mA
−4
−40mA −35mA
−30mA
−3
−25mA
−20mA
−15mA
−2
−10mA
−1
−5mA
0
IB=0A
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
Rev.A
2/3