2SD2583 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD2583

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2583

DESCRIPTION

·High Collector Current-IC= 5A

·Low Saturation Voltage -

: VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA

·High DC Current Gain-

: hFE= 150~600@ IC= 1A

APPLICATIONS

·Designed for audio frequency amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

30

V

VCEO Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5.0

A

ICP

Collector Current-Pulse

10

A

IB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

2.0

A

1.0

W

10

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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