2SD2583 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2583 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2583
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
0.15 V
0.25 V
0.5
V
1.5
V
0.1 μA
0.1 μA
150
600
50
120
MHz
77
pF
isc Website：www.iscsemi.cn
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